PW510 ingap hbt gain block http://www.prewell.com december 2006 1 4 1 2 3 features 5 - 4000mhz 20.5 db gain at 0.9ghz +20 dbm p1db +38 dbm output ip3 single voltage supply lead-free / green / rohs- compliant sot-89 package applications broadband gain block mobile infrastructure cellular, pcs, gsm, gprs, wcdma, wibro, wimax w-lan / dmb / ism catv / dbs rfid / fixed wireless functional diagram function pin no. rf in 1 rf out / bias 3 ground 2,4 the PW510 is a high performance ingap hbt mmic amplifie r and consists of darli ngton pair amplifiers. the amplifier features high linear performa nce, wideband operation, and high re liability. the PW510 operates from a single voltage supply and requires only two dc-blocking capacitors, a bias resistor and an inductor for operation. the device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable plastic sot-89 packages. description specifications symbol parameters units freq. min. typ. max. s21 gain db 75 mhz 900 mhz 1900 mhz 2300 mhz 3500 mhz 21.5 20.5 18.5 17.5 16.1 s11 input return loss db 75 mhz 900 mhz 1900 mhz 2300 mhz 3500 mhz -27 -24 -18 -16 -14 s22 output return loss db 75 mhz 900 mhz 1900 mhz 2300 mhz 3500 mhz -18 -25 -11 -9 -10 p1db output power @1db compression dbm 75 mhz 900 mhz 1900 mhz 2300 mhz 3500 mhz 20 20 19 18 16.5 oip3 output third order intercept dbm 75 mhz 900 mhz 1900 mhz 2300 mhz 3500 mhz 38.5 38.0 35.0 33.5 30.5 nf noise figure db 75 mhz 900 mhz 1900 mhz 2300 mhz 3500 mhz 3.4 3.4 3.5 3.6 v / i device voltage / current v/ma 5.4/85 rth thermal resistance c/w 65 test conditions : t=25 c, supply voltage=+6v, rbias=6.8ohm, 50ohm system, oip3 measured with two t ones at an output power of +3dbm/tone separated by 1mhz.
PW510 ingap hbt gain block http://www.prewell.com december 2006 2 frequency mhz 500 900 1500 1900 2300 3000 s21 db 20.9 20.5 19. 7 18.5 17.5 16.5 s11 db -14 -24 -24 -18 -16 -16 s22 db -14 -25 -14 -11 -9 -8 p1db dbm 20 20 20 19 18 17 oip3 @3dbm dbm 37.0 38. 0 36.5 35.0 33.5 31.5 noise figure db 3.4 3.4 3.4 3.5 3.6 4.2 typical rf performance for 1.9g hz tuned application circuit supply bias voltage = 6v, r(bi as)= 6.8 ohm, current= 85ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -40 -30 -20 -10 0 input return loss s11(db) frequency (ghz) +25 o c -40 o c +85 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 8 12 16 20 24 gain vs. frequency gain(db) frequency(ghz) +25 o c -40 o c +85 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -30 -20 -10 0 output return loss s22(db) frequency (ghz) +25 o c -40 o c +85 o c 0.51.01.52.02.53.0 25 30 35 40 45 output ip3 vs. frequency oip3(dbm) frequency(ghz) +25 o c -40 o c +85 o c 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 25 p1db vs. frequency p1db(dbm) frequency (ghz) +25 o c -40 o c +85 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 +25 o c nf vs. frequency nf(db) frequency (ghz) 6 8 10 12 14 -70 -65 -60 -55 -50 -45 -40 is-95, 9 ch.forward, 30 khz meas bw, +/- 885 khz offset acpr is-95a vs. channel power acpr(dbc) output channel power(dbm) freq=1.9ghz -20 -16 -12 -8 -4 0 4 8 0 5 10 15 20 25 output power / gain vs. input power @ 0.9ghz output power(dbm)/ gain(db) input power(dbm) gain output power -20-16-12-8-4048 0 5 10 15 20 25 output power / gain vs. input power @ 1.9ghz output power(dbm)/ gain(db) input power(dbm) gain output power
PW510 ingap hbt gain block http://www.prewell.com december 2006 3 1.9ghz tuned application circuit recommended bias values supply voltage r bias value size 6 v 6.8 ? 0805 7 v 18.6 ? 1210 8 v 30.4 ? 1210 9 v 42.1 ? 2010 10 v 53.9 ? 2010 12 v 77.4 ? 2512 rf in rf out 27nh 56pf 1uf 56pf 56pf supply voltage r bias frequency mhz 75 125 300 500 s21 : gain db 21.5 21.5 21.3 21.1 s11 : input return loss db -27 -35 -30 -25 s22 : output return loss db -18 -19 -18 -15 output p1db dbm 20 20 20 20 output ip3 @3dbm dbm 38.5 38.5 37.5 37.0 noise figure db 3.4 3.4 3.4 3.4 typical rf performance for 50 - 500mhz tuned application circuit supply bias voltage = 6v, r(bi as)= 6.8 ohm, current= 85ma rf in rf out 820nh 10nf 1uf 10nf 10nf supply voltage r bias 100 200 300 400 500 600 16 18 20 22 24 gain vs. frequency gain(db) frequency(mhz) +25 o c -40 o c +85 o c 100 200 300 400 500 600 -50 -40 -30 -20 -10 0 input return loss s11(db) frequency(mhz) +25 o c -40 o c +85 o c 100 200 300 400 500 600 -30 -20 -10 0 output return loss s22(db) frequency(mhz) +25 o c +85 o c -40 o c
PW510 ingap hbt gain block http://www.prewell.com december 2006 4 18 dbm output p1db 30 dbm output ip3 @ 3dbm frequency 3500mhz s21 : gain 16.1 db s11 : input return loss -14 db s22 : output return loss -10 db supply voltage 6 v current 85 ma rf in rf out 22nh supply voltage 6.8ohm 3.9pf 1uf typical rf performance for 3.5ghz tuned application circuit 3.9pf 3.9pf test board information : rogers 4350b pcb (dielectric constant = 3. 48, thick = 0.8mm(32mil)) 3000 3200 3400 3600 3800 4000 10 12 14 16 18 20 gain vs. frequency gain(db) frequency(mhz) s21 3000 3200 3400 3600 3800 4000 -25 -20 -15 -10 -5 0 return loss s11(db)/s22(db) frequency(mhz) s11 s22
PW510 ingap hbt gain block http://www.prewell.com december 2006 5 5 typical rf performance for 45 -1000mhz catv application(75 ? ) (1) frequency mhz 50 450 870 s21 : gain db 20.8 20.9 20.6 s11 : input return loss db -10 -15 -23 s22 : output return loss db -11 -15 -16 output p1db dbm 20 20 20 output ip3 (2) dbm 38 37 37 composite second order, cso (3) dbc 63 65 67 composite triple beat, ctb (3) dbc 75 74 70 cross modulation, xmod (3) dbc 74 71 71 noise figure db 3.5 3.4 3.4 current ma 85 1.test conditions : t=25 c, supply voltage=+6v, rbias=6.8ohm, 75ohm system 2. oip3 measured with two tones at an output power of +5dbm/tone separated by 1mhz. 3. 132 channels, 50-870mhz, + 18dbmv/channel flat loading rf in rf out rf choke (5) 1uf 10nf 10nf supply voltage (4) r bias (4) 10nf 4. supply voltage and r bias are refer to ?recommended bias values? on page 3. 5. rf choke is about 8.3uh. we reco mmend that wire of 0.2 phi radius wind 7 turns on toroid al core(size:4.0x1.5x2.0) 6. measurement for our data sheet was made on 1.6mm thick fr-4 board. and 75 ohm microstrip line 200 400 600 800 1000 19.5 20.0 20.5 21.0 21.5 22.0 gain vs. frequency s21(db) frequency(mhz) - 40 o c +25 o c +85 o c 200 400 600 800 1000 -40 -30 -20 -10 0 input return loss s11(db) frequency(mhz) - 40 o c +25 o c +85 o c 200 400 600 800 1000 -25 -20 -15 -10 -5 0 output return loss s22(db) frequency(mhz) - 40 o c +25 o c +85 o c 0 100 200 300 400 500 600 700 800 900 -90 -84 -78 -72 -66 -60 -54 132 channels, +18dbmv/channel flat loading cso/ctb/xmod vs. freq dbc frequency(mhz) ctb xmd cso
PW510 ingap hbt gain block http://www.prewell.com december 2006 6 lead-free /rohs compliant / green sot-89 package outline evaluation board layout (4x4) esd / msl ratings 1. esd sensitive device. observe handling precautions. 2. esd rating : class 2(passes at 2000v min.) human body model (hbm), jesd22-a114 3. esd rating : class iv (passes at 1000v min.) charged device model (cdm), jesd22-c101 4. msl (moisture sensitive level) rating : level 3 at +260 c convection reflow, j-std-020 mounting instructions 1. use a large ground pad area with many plated through-holes as shown. 2. we recommend 1 oz copper minimum. 3. measurement for our data sheet was made on 0.8mm thick fr-4 board. 4. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. rf trace width depends on the board material and construction. 6. add mounting screws near the part to fasten the board to a heatsink. absolute maximum ratings parameter rating unit device voltage +6 v device current 170 ma rf power input 10 dbm storage temperature -55 to +125 c ambient operating temperature -40 to +85 c junction temperature 160 c operation of this device above any of these parameters may cause permanent damage.
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